2SD667 Transistor

220uF 25V Radial Electrolytic 105C High Temperature, Low Leakage, Tol ±20%

NPN TO92 ECB 80V 1A 1W 100MHz

CMOS 4 x 2 input NOR gates 14DIL

CMOS 4 X 2 Input NAND gate 14DIL

CMOS 6 Inverters 16DIL

3 Watt 5% Wire-wound Resistor 0.47 ohm

9.5mm 20 Turn Precision Cermet Preset Top adjust. 5K ohms

NPN TO92 ECB 60V 150mA 80MHz, Gain group Y. Genuine Toshiba

Replaces 2SC1815

Complement to 2SA1015Y